VINO News
News and Announcements from the VINO Group
News and Announcements from the VINO Group
Yunkun's paper entitled "Anatomy of nanomagnetic switching at a 3D topological insulator PN junction (link)" published in Scientific Reports. In this paper, Y. Xie et al. analyze how spins filtered at an in-plane topological insulator PN junction (TIPNJ) interact with a nanomagnet, and argue that the intrinsic charge-to-spin conversion does not translate to an external gain if the nanomagnet also acts as the source contact.
Golam's paper entitled "A Deep Dive Into the Computational Fidelity of High-Variability Low Energy Barrier Magnet Technology for Accelerating Optimization and Bayesian Problems (link)" published in IEEE Magnetics Letters. In this paper, G. Morshed et al. show the impact of non-idealities on computational networks built from low-barrier magnets (LBMs). The results suggest although the switching process is fully stochastic for LBMs, the margin of error introduced by various non-idealities, i.e., characteristics distortion and energy-barrier variation, is almost always certifiable to a certain percentage.
Golam's paper entitled "Choose your tools carefully: a comparative evaluation of deterministic vs. stochastic and binary vs. analog neuron models for implementing emerging computing paradigms (link)" published in Frontiers in Nanotechnology. In this paper, G. Morshed et al. show a comparative analysis between analog and binary neuron models (including stochasticity) for analog time-series prediction tasks. The results suggest analog stochastic neuron (ASN) model shows better performance metrics, i.e., inference errors, generalizability and robustness, practical implementability, and memory capacity, than its binary counterpart.
Hamed's paper entitled "Low Power In-Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures (link)" published in ACS Nano. In this paper, H. Vakili et al. show the use of two ferromagnet (FM)/topological insulation (TI) heterostructures to design an integrated 1-transistor 1-magnetic tunnel junction magnetic (1T-1MTJ) random access memory unit (MRAM) for an ultra-low power Processing-in-Memory (PiM) architecture.
Md Golam Morshed, a Ph.D. student of electrical engineering, has joined the search for high-speed, high-density, low energy consumption memory technology.
Golam's recent paper entitled "Positional Stability of Skyrmions in a Racetrack Memory with Notched Geometry (link)" published in Physical Review Applied. Hamed Vakili shared equal authorship in this paper. In this paper, we solve micromagnetic equations to simulate skyrmion trajectories and extract quasi-analytical equations for their energy barrier and their dependence on the material and geometrical properties of the racetrack. Our numerical study shows that it is indeed possible to create constrictions designed along a racetrack that can hold the skyrmions in place long enough for meaningful information storage, yet easily cleared with a modest current pulse.
Dr. Samiran Ganguly, our former post-doc, recently joined the Virginia Commonwealth University as a research associate. A big congratulations to Dr. Ganguly!
Hamed Vakili, a recent graduate from our group joined the University of Nebraska–Lincoln as a post-doc. A big congratulations to Dr. Vakili!
We celebrated Hamed's dissertation defense and Sheikh's hooding ceremony lately. Congratulations once again to them. Also, we bid farewell to our post-doc Dr. Samiran Ganguly. Best wishes to all three for their new placement.
Sheikh's paper on III-V digital alloy-based avalanche photodiodes picked up for Physical Review Applied Editors' suggestion! Congrats to Ahmed et al.