VINO News
News and Announcements from the VINO Group
News and Announcements from the VINO Group
Samiran's recent paper entitled "Extrinsic voltage control of effective carrier lifetime in polycrystalline PbSe mid-wave IR photodetectors for increased detectivity (link)" published in AIP Advances
Sheikh's recent paper entitled "Minimum-Energy Digital Computing with Steep Subthreshold Swing Tunnel FETs (link)" published in IEEE Annals of the History of Computing.
Hamed's recent paper entitled "Temporal Memory with Magnetic Racetracks" got accepted to publish in IEEE journal.
Yunkun's recent paper got accepted. This research on Skyrmionns will improve memory at the nanoscale.
Yunkun joined Uber as a Software Engineer.
We do plenty of math, so I’d like to test out MathJax support.
Here is an example of MathJax inline rendering -1/x^2. And here is a block rendering:
Now, if we’d like to get serious, we’d do something involving multiline aligned equations, like
or even an inline formula like
Or we could try defining a command, like this.
Buffer slides off the sides of our tubes like H2o off a duck’s back.
Research in our group has the advantage of being both curiosity driven and needs driven. Industry is always looking for ways to design or utilize novel materials and devices for new applications. To that end, our research focuses on three aspects of nanoelectronic modeling and simulation:
Fundamental physics of current flow through nanosystems: Traditional CAD tools for electronic conduction are based on macroscopic concepts such as mobility and diffusion that do not apply at these length scales. Our methods include effects due to quantum interference right from the outset, along with inelastic scattering, ‘friction’ and heating due to vibrations and spins, strong non-equilibrium many-body effects, and time-dependent effects due to hysteretic switching, memory and noise.
Computational modeling: Here we develop the formal evolution equations into quantitative simulation tools. This includes semi-empirical as well as ‘first principles’ methods for capturing chemistry, bandstructure and transport, describing the nano-channels and contact surfaces atomistically. Special attention is aimed at multiscaling and embedding techniques to describe hetero-interfaces and surface states, as in hybrid molecule-silicon devices.
Device engineering: Here we combine the formal equations with numerical simulations to identify performance advantages and limitations of nanoscale devices, such as resonant tunneling diodes, switches, conductors, interconnects, transistors and electronic sensors made out of various materials such as molecules, nanotubes, nanowires, spintronic or magnetic elements and silicon quantum dots. Part of our current interests involve exploring hybrid devices operating on novel principles, such as gate-tunable scattering centers for characterization and detection, conformationally gated molecules for nano-relays, molecular redox centers and motors integrated on a silicon CMOS platform for memory and heat sinking.