• Summary: 125+ publications including 1 book, 6 book chapters, and another book in contract (stand alone, not edited), 2 patents
• Published Journal papers have ~4200 citations, 12 papers at 100+ citations, h index 33
• 125+ invited/keynote talks
J: Published/Accepted Journal
C: Invited Conference Paper
I: Invention Disclosure/Patent
B: Book Chapter/Book
Magnetism and Memory Technology
J1. “Remarkable tunability in high-frequency magnetoelectric voltage tunable inductor with anisotropy cancellation”,Yongke Yan, Liwei Geng, Yaohua Tan, Jianhua Ma, Avik W. Ghosh, Yu Wang and Shashank Priya, Nature Comms 9, 4998 (2018).
P2. “Structural and Magnetic Properties Analyses of the Bulk FexCo1xTiSb alloy system: The Fe0.5Co0.5TiSb Compound as Prototypical Half Heusler”, N. Naghibolashrafi, S. Keshavarz, V.I.Hegde, S. Naghavi, J.Ma, A. Gupta, P. LeClair, W.H. Butler, C.Wolverton, K. Munira, D.Mazumdar, A. W. Ghosh, Submitted
J3. “Hexagonal Fe2MnGe: Novel Candidate for Perpendicular Magnetic Anisotropy”, Keshavarz, N. Naghibolashrafi, J. Ma, D. Mazumdar, R.Mishra, A. W. Ghosh, W.H. Butler, A. Gupta, C. Mewes, P. LeClair, Submitted.
P4. “Skyrmion Formation Induced by Antiferromagnetic-enhanced Interfacial Dzyaloshinskii Moriya Interaction”, Marco Chung Ting Ma, Yunkun Xie, Howard Sheng, S. Joseph Poon, and Avik W. Ghosh, arXiv preprint arXiv:1806.06334, 2018
J5. “Computational Investigation of InverseHeusler Compounds for Spintronics Applications”, Jianhua Ma, Jiangang He, Dipanjan Mazumdar, Kamaram Munira, Sahar Keshavarz, Tim Lovorn, C Wolverton, Avik W Ghosh, William H Butler, Phys. Rev. B 98, 094410 (2018).
J6. “From materials to systems: a multiscale analysis of nanomagnetic switching”, Yunkun Xie, Jianhua Ma, Samiran Ganguly and Avik W. Ghosh, invited paper for J. Comp. Electronics, 16, 1201 (2017).
J7. “Fokker-Planck Study of Parameter Dependence on Write Error Slope in Spin-Torque Switching, Yunkun Xie, Behtash Behin-Aein, Avik W. Ghosh, IEEE Transactions on Electron Devices, 64, 319 (2017).
J8. “Computational Investigation of Half-Heusler Compounds for Spintronics Applications”, Jianhua Ma, Vinay I. Hegde, Kamaram Munira, Yunkun Xie, Sahar Keshavarz, David T. Mildebrath, C. Wolverton, Avik W. Ghosh, W. H. Butler, Phys. Rev B 95, 024411 (2017). Selected as Editor’s Highlight.
J9. “Synthesis and characterization of Fe-Ti-Sb intermetallic compounds: discovery of a new Slater-Pauling phase”, N. Naghibolashrafi, S. Keshavarz, V. I. Hegde, A. Gupta, W. H. Butler, J. Romero, K. Munira, P. LeClair, D. Mazumdar, J. Ma, A. W. Ghosh and C. Wolverton, Phys. Rev. B 93, 104424 (2016).
J10. “Anisotropy in layered half-metallic Heusler alloy superlattices”, J. G. Azdani, K. Munira, J. Romero, J. Ma, C. Sivakumar, A. W. Ghosh and W. H. Butler, J. Appl. Phys. 119, 043904 (2016).
B11. “Spin Transfer Torque: A Multiscale Picture”, Y. Xie, K. Munira, I. Rungger, M. T. Stemanova, S. Sanvito and A.W. Ghosh, (invited book chapter, ‘Nanomagnetic and Spintronic Devices for Energy Efficient Memory and Computing’, ed. S. Bandyopadhyay and J. Atulasimha, 2016)
J12. “Reducing error rates in straintronic multiferroic dipole-coupled nanomagnetic logic by pulse shaping”, K. Munira, Y. Xie, S. Nadri, M. B. Forgues, M. S. Fashami, J. Atulasimha, S. Bandyopadhyay and A. W. Ghosh, Nanotechnology, 26, 245202 (2015).
J13. “Chiral tunneling of topological states for giant longitudinal spin Hall angle”, K. M. Masum Habib, R. N. Sajjad and A. W. Ghosh, Phys. Rev. Lett. 114, 176801 (2015).
J14. “Switching of dipole coupled multiferroic nanomagnets in the presence of thermal noise: reliability analysis of hybrid spintronic-straintronic nanomagnetic logic”, S. Fashami, K. Munira, S. Bandyopadhyay, A W Ghosh and J Atulasimha, IEEE TNano, 12, pp 1206-1212 (2013)
B15. “Material Issues for efficient Spin-transfer Torque RAMs”, K. Munira, W. A. Soffa and A. W. Ghosh, Chapter 67, pp 849-863, Nanoelectronic Device Applications, CRC Press 2013, ed. James E. Morris, Krzysztof Iniewski.
J16. “A quasi-analytical model for energy-delay-reliability tradeoff studies in single barrier, perpendicular STT-RAM cell”, K. Munira, W. H. Butler and A. W. Ghosh, IEEE Transactions on Electron Devices Vol. 59, pp 2221-2226 (2012)
J17. “Advances and Future Prospects of STT-RAM”, E. Chen, D. Apalkov, Z. Diao, A. Driskill-Smith, D. Druist, D. Lottis, V. Nikitin, X. Tang, S. Watts, S. Wang, S. A. Wolf, A. W. Ghosh, J. W. Lu, S. J. Poon, M. Stan, W. H. Butler, S. Gupta, C. K. A. Mewes, T. Mewes and P. B. Visscher, IEEE Trans. Magn. 46, 1873-1878 (2010).
P18. X. Li, J. Zhang, A. A. Puretzky, A. Yoshimura, X. Sang, O. Cui, Y. Li, A. Oyedele, L. Liang, A. W. Ghosh, V. Meunier, H. Zhao, R. R. Unocic, C. M. Rouleau, B. G. Sumpter, D. B. Geohegan and K. Xiao, “Isotopically enriched two-dimensional MoS2 atomic layers with enhanced in-plane thermal conductivity”, Submitted.
P19. “Impact of non-idealities on chiral switching in graphene Klein tunnel transistors”, Mirza M. Elahi, K. M. Masum Habib, Ke Wang, Gil-Ho Lee, Philip Kim, and Avik W. Ghosh, Submitted.
P20. “Atomic scale characterization of graphene p-n junctions for electron-optical applications”, Xiaodong Zhou, Alexander Kerelsky, Mirza M. Elahi, Dennis Wang, K. M. Masum Habib, Redwan N. Sajjad, Pratik Agnihotri, Ji Ung Lee, Avik W. Ghosh, Frances M. Ross, and Abhay N. Pasupathy, Submitted.
P21. “Graphene Transistor Based on Tunable Dirac-Fermion-Optics”, K Wang, M. M. Elahi, K. M. M. Habib, T. Taniguchi, K. Watanabe, A. W. Ghosh, G-H. Lee, and P. Kim, PNAS 116, 6575 (2019).
J22. “PdSe2: Pentagonal 2D layers with High Air Stability for Electronics”, A. D. Oyedele, S. Yang, L. Liang, A. A. Puretzky, K. Wang, J. Zhang, P. Yu, P.R. Pudasaini, A. W. Ghosh, Z. Liu, C. M. Rouleau, B. G. Sumpter, M. F. Chisholm, W. Zhou, P. D. Rack, D. B. Geohegan and K. Xiao, JACS 139, 14090 (2017).
J23. “Spintronic signatures of Klein tunneling in topological insulators”, Yunkun Xie, Yaohua Tan and Avik W. Ghosh, Phys Rev B 96, 205151 (2017).
J24. “Graphene Klein tunnel transistors for high speed analog RF applications”, Yaohua Tan, Mirza M. Elahi, Han-Yu Tsao, K. M. Masum Habib, N. Scott Barker and Avik W. Ghosh, Nature Scientific Reports 7, 9714 (2017).
I25. “Graphene device including angular split gate”, R. N. Sajjad and A. Ghosh, US Patent 9,570,559 B2 (2017).
I26. “Extremely large spin hall angle in topological insulator pn junction”, KMM Habib, RN Sajjad, A Ghosh US Patent 9,865,713 (2017).
J27. “Electron optics with ballistic graphene junctions”, S. Chen, Z. Han, M. M. Elahi, K. M. Masum Habib, L. Wang, B. Wen, Y. Gao, T. Taniguchi, K. Watanabe, J. Hone, A. W. Ghosh and C. R. Dean, Science 353, 1522 (2016). Top-10 breakthrough of 2016, Physics World Editors.
J28. “Modified Dirac Hamiltonian for Efficient Quantum Mechanical Simulations of Micron Sized Devices", M. Habib, R. Sajjad and A. W. Ghosh, Appl. Phys. Lett., 108, 113105 (2016).
J29. “Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene”, R. N. Sajjad, F. Tseng, M. Habib and A. W. Ghosh, Phys. Rev. B 92, 205408 (2015).
J30. “Manipulating chiral transmission with gate geometry: switching with graphene with transmission gaps”, R. Sajjad and A. W. Ghosh, ACS Nano 7, 9808, 6pps (2013),
J31. “Atomistic deconstruction of current flow in graphene based hetero-junctions”, R. N. Sajjad, C. Polanco and A. W. Ghosh, invited paper, Special Issue on graphene nanostructures, Ed. Branislav Nikolic, J. Comp. El, 12, 232- 247 (2013).
J32. Manifestation of Chiral tunneling in tilted graphene pn junction", R. N. Sajjad, S. Sutar, J. Lee and A. W. Ghosh, Phys. Rev. B 86, 155412 (2012), 5 pps
B33. “Graphene Nanoribbons: From chemistry to circuits”, F. Tseng, D. Unluer, M. R. Stan and A. W. Ghosh, Chapter 18 pages 555-586, ‘Graphene Nanoelectronics: Metrology, Synthesis, Properties and Applications’, Ed. H. Raza (Springer), 2012
J34. “High efficiency switching using graphene based electron optics", R. Sajjad and A. W. Ghosh, Appl. Phys. Lett. Vol. 99, 123101, 4pps (2011).
J35. “Monolithically Patterned Wide-Narrow-Wide All-Graphene Devices”, Dincer Unluer, Frank Tseng, Avik W. Ghosh, Mircea R. Stan, IEEE-TNano, 10, 931-939, (2011).
J36. “Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors”, F. Tseng, D. Unluer, K. Holcomb, M. Stan and A. W. Ghosh, Appl. Phys. Lett. 94, 223112, 3pps (2009).
Low Power Logic, Neuromorphic Computing and Switching devices
J37. “Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance”, Sheikh Z. Ahmed, Yaohua Tan, Daniel S. Truesdell, Benton H. Calhoun, Avik W. Ghosh, Journal of Applied Physics, vol. 124, pp. 154503, 2018
C38. “Hardware based Spatio-Temporal Neural Processing Backend for Imaging Sensors: Towards a Smart Camera”, Samiran Ganguly, Yunfei Gu, Mircea R. Stan, and Avik W. Ghosh, invited paper, SPIE 2018
P39. “Reservoir computing using stochastic p-bits”, Samiran Ganguly, Kerem Y. Camsari and Avik W. Ghosh, arxiv: 1709.10211 (2017).
P40. “Steep Subthreshold Switching with Nanomechanical FET Relays”, D. Unluer and A. W. Ghosh, IEEE-TED 63, 1681 (2016).
P41. “Transmission engineering as a route to subthermal switching”, A. W. Ghosh, special issue on low subthreshold switching, IEEE JEDS 3, 135 (2015).
P42. “Computing with Nonequilibrium Ratchets”, D. Unluer and A. W. Ghosh, IEEE TNano 12, 330-339 (2013).
B43. “Emerging Devices”, S. Bandyopadhyay, M. Cahay and A. W. Ghosh, Chapter 5, pps 59-69 in ‘Electron Devices: An Overview by the Technical Area Committee of the IEEE Electron Devices Society’, Ed. Joachim Burghartz, John Wiley & Sons Ltd, 2013. PROSE award 2013.
Phononics and Thermal Transport
P44. “Boosting thermal conductivity of two-dimensional MoS2 through isotope-engineering”, Xufan Li, Jingjie Zhang, Alexander A. Puretzky, Anthony Yoshimura, Xiahan Sang, Qiannan Cui, Yuanyuan Li, Liangbo Liang, Avik W. Ghosh, Hui Zhao, Raymond R. Unocic, Vincent Meunier, Christopher M. Rouleau, Bobby G. Sumpter, David B. Geohegan, Kai Xiao, submitted to Advanced Materials, 2018
J45. “Interplay between coherent and incoherent phonon transport in the thermal conductivity of superlattices from the nanoscale to the microscale”, R. Cheaito, C. A. Polanco, S. Addamane, J. Zhang, A. W. Ghosh, G. Balakrishnan and P. E. Hopkins, Phys. Rev. B 97, 085306 (2018).
J46. “Optimizing the interfacial thermal conductance at gold-alkane junctions from 'First Principles”, Jingjie Zhang, Carlos A. Polanco, Avik W. Ghosh, ASME Journal of Heat Transfer 140, 092405 (2018).
P47. “On the wave and particle nature of phonons contributing to thermal transport in superlattices”, Ramez Cheaito, Sadhvikas Addamane, Carlos A. Polanco, Jingjie Zhang, Avik W. Ghosh, Ganesh Balakrishnan, and Patrick E. Hopkins, Submitted
J48. “Effects of bulk and interfacial anharmonicity on thermal conductance at solid/solid interfaces”, Nam Q. Le, Carlos A. Polanco, Rouzbeh Rastgarkafshgarkolaei, Jingjie Zhang, Avik W. Ghosh, Pamela M. Norris, Phys. Rev. B 95, 245417 (2017).
J49. “Design rules for interfacial thermal conductance - building better bridges”, Carlos A. Polanco, Rouzbeh Rastgarkafshgarkolaei, Jingjie Zhang, Nam Le, Pamela M. Norris, Avik W. Ghosh, Phys. Rev. B 95, 195303 (2017).
J50. “Role of crystal structure and junction morphology on interface thermal conductance”, C. A. Polanco, R. Rastgarkafshgarkolaei, J. Zhang, N. Q. Le, P. M. Norris, P. E. Hopkins, and A. W. Ghosh, Phys. Rev. B 92, 144302 (2015).
J51. “Enhancing Phonon Flow through 1D interfaces by impedance matching”, C. Polanco and A. W. Ghosh, J. Appl. Phys. 116, 083503 (2014).
J52. “Impedance matching of atomic thermal interfaces using primitive block decomposition,” C. Polanco, C. B. Saltonstall, P. M. Norris, P. E. Hopkins, and A.W. Ghosh, Cover article, Nanoscale and Microscale Thermophysical Engineering, 17, 263-279 (2013).
J53. “Effect of interface adhesion and impurity mass on phonon transport at atomic junctions,” C. B. Saltonstall, C. Polanco, J. C. Duda, A. W. Ghosh, P. M. Norris, and P.E. Hopkins, Journal of Applied Physics 113, 013516, 8pps (2013).
J54. “Extracting phonon thermal conductance across nanoscale junctions: Non-equilibrium Green's function approach compared to semiclassical methods", P. E. Hopkins, P. M. Norris, M. Tsegaye and A. W. Ghosh, Journal of Applied Physics 106, 063503, 10pps (2009).
J55. “Phonon runaway in nanotube quantum dots”, L. Siddiqui, A. W. Ghosh and S. Datta, Phys. Rev. B 75, 085433, 9pps (2007).
Organic Molecules, Nanowires/Nanotubes and Quantum Dots
J56. "Using room temperature current noise to characterize single molecular spectra", S. Vasudevan and A. W. Ghosh, ACS Nano 8, 2111-2117 (2013).
B57. Electronics with Molecules”, A. W. Ghosh, Invited Book Chapter In Bhattacharya P. Fornari R, and Kamimura H (eds) Comprehensive Semiconductor Science and Technology, vol. 5, pp. 383-479 (2011), Amsterdam: Elsevier.
J58. "Coupling electrical and optical gating for electronic read-out of quantum dot dynamics", S. Vasudevan, K. Walczak and A. W. Ghosh, Phys. Rev. B 82, 085324, 5pps (2010).
J59. "Controlling transistor threshold voltages using molecular dipoles", S. Vasudevan, N. Kapur, T. He, M. Neurock, J. M. Tour and A. W. Ghosh, J. Appl. Phys. 105, 093703, 4pps (2009).
J60. “Reversal of current blockade through multiple trap correlations”, J. Chan, B. Burke, K. Evans, K. A. Williams, S. Vasudevan, M. Liu, J. Campbell and A. W. Ghosh, Physical Review B 80, 033402, 4pps (2009).
J61. “The role of Many Particle Excitations in Coulomb Blockaded Transport”, B. Muralidharan, L. Siddiqui and A. W. Ghosh, J. Phys. Cond. Mat. 20, 374109, 13pps (2008).
J62. “Rectification by charging -- Contact-induced current asymmetry in Coulomb Blockaded molecules”, O. D. Miller, B. Muralidharan, N. Kapur and A. W. Ghosh, Phys. Rev. B, 77, 125427, 10pps (2008).
J63. “Modeling electrostatic and quantum detection of molecules”, S. Vasudevan, K. Walczak, N. Kapur, M. Neurock and A. W. Ghosh, IEEE-Sensors Vol. 8, 857, 4pps (2008).
J64. “Impact of structure relaxation on the Performance of small Diameter, n-type <110> Si-Nanowire FETs”, G-C. Liang, D. Kienle, S. Patil, J. Wang, A. W. Ghosh and S. Khare, IEEE-TNano 6, 225, 5pps (2007).
J65. “Theory of high bias Coulomb Blockade in ultrashort molecules”, B Muralidharan, A. W. Ghosh, S. K. Pati and S. Datta, IEEE-TNT 6, 536, 9pps (2007).
J66. “Conductance in molecular quantum dots – fingerprints of wave-particle duality?”, B. Muralidharan, A. W. Ghosh and S. Datta, Molecular Simulation (Special Issue ed. D. Beratan), 32, 751-758 (2006).
J67. “Probing electronic excitations in molecular conduction”, B. Muralidharan, A. W. Ghosh and S. Datta, Phys. Rev. B 73, 155410, 5pps (2006).
J68. “Atomistic Modeling of Metal-nanotube contacts”, D. Kienle, A. Ghosh and M. Lundstrom, J. Comp. El. 4, 97-100 (2005).
J69. “A self-consistent transport model for molecular conductors with applications to some real systems”, F. Zahid, M. Paulsson, E. Polizzi, A. W. Ghosh and S. Datta, J. Chem. Phys. 123, 064707, 10pps (2005).
J70. “On the validity of the Parabolic Effective-Mass approximation for the current-voltage calculation of silicon nanowire transistors”, J. Wang, A. Rahman, A. Ghosh, G. Klimeck and M. Lundstrom, IEEE Transactions on Electron Devices 52, 1589, 5pps (2005).
J71. “Theoretical Investigation of surface roughness scattering in silicon nanowire transistors”, J. Wang, E. Polizzi, A. Ghosh, S. Datta and M. Lundstrom, Appl. Phys. Lett. 87, 043101, 3pps (2005).
J72. “Performance evaluation of ballistic nanowire transistors with atomic-basis dispersion relations”, J. Wang, A. Rahman, A. Ghosh, G. Klimeck and M. Lundstrom, Appl. Phys. Lett. 86, 093113, 3pps (2005).
J73. “A Quantum Mechanical Approach for the Simulation of Si/SiO2 interface roughness scattering in Silicon Nanowire Transistors”, J. Wang, E. Polizzi, A. Ghosh, S. Datta and M. Lundstrom, J. Comp. El. 4, 453-457 (2005).
J74. “Identifying contact effects in electronic conduction through buckyballs on silicon”, G-C. Liang, A. W. Ghosh and S. Datta, Phys. Rev. Lett. 95, 076403, 4pps (2005).
J75. “Molecules on silicon: Self-consistent First-Principles Theory and calibration to experiments”, T. Rakshit, G-C. Liang, A. W. Ghosh, M. C. Hersam and S. Datta, Phys. Rev. B 72, 125305, 11pps (2005).
J76. “Modeling Challenges in Molecular Electronics on Silicon”, T. Rakshit, G-C. Liang, A. W. Ghosh and S. Datta, J. Comp. El. 4, 83-86 (2005).
J77. “Silicon-based molecular electronics”, T. Rakshit, G-C. Liang, A. W. Ghosh and S. Datta, Nano Lett. 4, 1803, 5pps (2004).
J78. “Electrostatic potential profiles of molecular conductors”, G-C. Liang, A. W. Ghosh, M. Paulsson and S. Datta, Phys. Rev. B 69, 115302, 12pps (2004).
B79. “Molecular Electronics: Theory and Device prospects”, A. W. Ghosh, P. S. Damle, S. Datta and A. Nitzan, MRS Bull. 29, 391, 5pps (2004) (Special issue on Molecular Transport Junctions).
J80. “Charging-induced asymmetry in molecular conductors”, F. Zahid, A. W. Ghosh, M. Paulsson, E. Polizzi and S. Datta, Phys. Rev. B 24, 245317, 5pps (2004).
J81. “Gating of molecular transistors: electrostatic and conformational”, A. W. Ghosh, T. Rakshit and S. Datta, Nano Lett. 4, 565, 4pps (2004), adopted for a course at MIT.
J82. “Breaking of general rotational symmetries by multidimensional classical ratchets”, A. W. Ghosh and S. V. Khare, Phys. Rev. E 67, 056110, 11pps (2003).
J83. “Molecular conduction: paradigms and possibilities”, A. W. Ghosh and S. Datta, J. Comp. El. 1, 515, 11pps (2002).
J84. “First-Principles Analysis of Molecular Conduction Using Quantum Chemistry Software”, P. S. Damle, A. W. Ghosh and S. Datta, Chem. Phys. 281, 171-187 (2002) (Special issue on Molecular Nanoelectronics, Ed. Mark Ratner).
J85. “Charge transfer in molecular conductors - oxidation or reduction?”, A. W. Ghosh, F. Zahid, S. Datta and R. Birge, Chem. Phys. 281, 225-230 (2002) (Special issue on Molecular Nanoelectronics, Ed. Mark Ratner).
J86. “Unified description of molecular conduction: from molecules to metallic wires”, P. S. Damle, A. W. Ghosh and S. Datta, Phys. Rev. B 64 Rapid Comms., 201403 (R), 4pps (2001).
J87. “Temperature dependence of the conductance of multi-walled carbon nanotubes”, E. Graugnard, B. Walsh, A. W. Ghosh, S. Datta, P. J. de Pablo and R. Reifenberger, Phys. Rev. B 64, 125407, 7pps (2001)
Transport Formalism and Computational Methods
P88. “Machine Learning Electron Correlation in Disordered Medium”, Jianhua Ma, Yaohua Tan, Avik W. Ghosh and Gia-Wei Chern, arXiv:1810.02323
B89. “Nanoelectronics, a Molecular View” – Avik Ghosh, World Scientific Series in Nanoscience and Nanotechnology, 2016.
J90. “First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding”, Y. Tan, F. Chen and A. W. Ghosh, Applied Physics Letters, 109, 101601 (2016).
B91. “Nanoscale device modeling”, P. S. Damle, A. W. Ghosh and S. Datta, Book chapter in “Molecular Nanoelectronics”, 21pps, Ed. Mark Reed and Takhee Lee, American Scientific Publishers, 2003.
J92. “Extended Huckel theory for bandstructure, chemistry and transport. Part II: Silicon”, D. Kienle, K. Bevan, G-C. Liang, L. Siddiqui, J-I. Cerda and A. W. Ghosh, J. Appl. Phys. 100, 043715, 8pps (2006).
J93. “Extended Huckel theory for bandstructure, chemistry and transport. Part I: Carbon Nanotubes”, D. Kienle, J-I. Cerda and A. W. Ghosh, J. Appl. Phys. 100, 043714, 9pps (2006).
J94. “Generalized effective mass approach for cubic semiconductor n-MOSFETs on arbitrarily oriented wafers”, A. Rahman, A. Ghosh and M. Lundstrom, J. Appl. Phys. 97-100, 053702, 12pps (2005).
J95. “Rotation in an asymmetric multidimensional potential in the presence of colored noise”, A. W. Ghosh and S. V. Khare, Phys. Rev. Lett. 84, 5243, 4pps (2000).
Chemical Sensors, Photo Detectors and THz response
J96. “Toward deterministic construction of low noise avalanche photodetector materials”, A. K. Rockwell, M. Ren, M. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank, Applied Physics Letters, vol. 113, pp. 102106, 2018
J97. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Yiwei Peng, Ann-Kathryn Rockwell, Seth R Bank, Avik Ghosh, Joe C Campbell, Photonics Research 6, 794 (2018).
J98. “Digital Alloy InAlAs Avalanche Photodiodes”, Jiyuan Zheng, Yuan Yuan, Yaohua Tan, Yiwei Peng, Ann-Kathrine Rockwell, Seth R Bank, Avik Ghosh, Joe C Campbell, Journal of Lightwave Technology, 36, 3580 (2018).
J99. “Bloch oscillations in the presence of plasmons and phonons”, A. W. Ghosh, L. Jönsson and J. W. Wilkins, Phys. Rev. Lett. 85, 1084, 4pps (2000).
J100. “Coupled Bloch-phonon oscillations in GaAs/AlGaAs superlattices: theory and experiment”, T. Dekorsy, A. Bartels, H. Kurz, A. W. Ghosh, L. Jönsson, J. W. Wilkins, K. Kohler, R. Hey and K. Ploog, Physica E 7, 279-284 (2000).
J101. “Nonlinear Terahertz response of a one dimensional superlattice,” A. W. Ghosh and J. W. Wilkins, Phys. Rev. B 61, 5423, 8pps (2000).
J102. “Third harmonic generation by Bloch oscillating electrons in a quasi-optical array,” A. W. Ghosh, M. C. Wanke, S. J. Allen and J. W. Wilkins, Appl. Phys. Lett. 74, 2164, 3pps (1999).
J103. “Reflection of THz radiation by a superlattice,” A. W. Ghosh, A. V. Kuznetsov and J. W. Wilkins, Phys. Rev. Lett. 79, 3494, 4pps (1997).
J104. “Diffusion rate for a Brownian particle in a cosine potential in the presence of colored noise,” A. Ghosh, Phys. Lett. A 187, 54-58 (1994).
Other Conference Publications
C105. “APD Performance Enhancement: Minigap Engineering in Digital Alloys”, Sheikh Z. Ahmed, Yaohua Tan, Jiyuan Zheng, Joe C. Campbell, and Avik W. Ghosh, IEEE Photonics Conference, 2018
C106. Jianhua Ma, Jiangang He, Vinay I. Hegde, Kamaram Munira, Nariman Naghibolashrafi, Sahar Keshavarz, Dipanjan Mazumdar, Avik W. Ghosh, C. Wolverton and W. H. Butler. (2017)
C107. Computational Investigation of Heusler Compounds for Spintronics Applications. AVS 64th International Symposium & Exhibition, Tampa Convention Center, Tampa, Florida, USA.
C108. Jianhua Ma, Jiangang He, Dipanjan Mazumdar, Kamaram Munira, Sahar Keshavarz, Tim Lovorn, C Wolverton, Avik W Ghosh, William H Butler. (2017). Computational Investigation of InverseHeusler Compounds for Spintronics Applications. 62nd Annual Conference on Magnetism and Magnetic Materials (2017 MMM), The David L. Lawrence Convention Center, Pittsburgh, PA, USA.
C109. “Computational Investigation of Heusler Alloys for Spintronic Applications”, Jianhua Ma, Vinay I. Hegde, Kamaram Munira, Yunkun Xie, Sahar Keshavarz, C. Wolverton, Avik W. Ghosh and William H. Butler, Annual Conference on Magnetism and Magnetic Materials, 2016.
C110. “Current saturation and steep switching in graphene PN junctions using angle-dependent scattering”, M. M. Elahi and A. W. Ghosh, 74th Device Research Conference, Delaware 2016.
C111. “First principles study of twisted bilayer MoS2 through band unfolding”, Y. Tan and A. W. Ghosh, 74th Device Research Conference, Delaware 2016.
C112. “Fokker-Planck simulation of stochastic write error in spin torque switching with thermal noise”, Y. Xie, B. Behin-Aein and A. W. Ghosh, 74th Device Research Conference, Delaware 2016.
C113. "A quantum mechanics inspired simulation platform for nanoscale devices", Redwan N. Sajjad, K. M. Masum Habib, Avik Ghosh, SRC TECHCON, Austin, 2014.
C114. “Conductance of graphene: role of metal contact, charge puddles and differential gating”, Redwan N. Sajjad, Frank Tseng, Avik Ghosh, 72st Device Research Conference, Santa Barbara, 2014.
C115. “Novel switching mechanism through angle dependent transmission in graphene pn junction”, Redwan N. Sajjad, Avik Ghosh, 71st Device Research Conference, Notre Dame, 2013.
C116. "Novel switching mechanism with graphene pn junctions: device physics and circuit analysis", Redwan N. Sajjad, Chenyun Pan, Azad Naeemi, Avik Ghosh, SRC TECHCON, Ausin, 2013.
C117. “Balancing stress & dipolar interactions for fast, low power, reliable switching in multiferroic logic”, K. Munira, S. Nadri, M. Forgues, A. W. Ghosh, Device Research Conference, 67-68, 2012.
C118. “Modeling and visualizing electrons in graphene”, Redwan N. Sajjad, F. Tseng, Avik Ghosh, 15th International Workshop on Computational Electronics (IWCE), Madison, 2012.
C119. “Graphene electronics and electron optics: quantum transport and device opportunities”, Redwan N. Sajjad, F. Tseng, D. Unluer, Avik Ghosh, Graphene International Conference, Belgium, 2012.
C120. “Thermal Impedance Matching at Nanoscale Material Interfaces”, C. A. Polanco, C. B. Saltonstall, P. E. Hopkins, P. M. Norris and A. W. Ghosh,
ASME Summer Heat Transfer Conference, 2012
C121. “Tunable transmission gap in graphene p-n junction”, Redwan N. Sajjad and Avik Ghosh, International Semiconductor Device Research Symposium (ISDRS), Maryland, 2011.
C122. “Comparative material issues for fast reliable switching in STT-RAMs”, K. Munira, W.A. Soffa, A.W. Ghosh, 11th IEEE Conference on Nanotechnology (IEEE-NANO), pp.1403-1408, Aug. 2011.
C123. “Molecular Spectroscopy from current fluctuations”, S. Vasudevan, T. W. Chan, K. Williams and A. W. Ghosh, Villa Conference on Interaction among Nanostructures, 2010, Santorini, Greece.
C124. “A molecular description of current flow”, A. W. Ghosh, K. Munira and M. Tsegaye, NanoTurkey 2010.
C125. “Beyond CMOS switching paradigms”, L. Li, D. Unluer, M. R. Stan and A. W. Ghosh, IEEE-Nano 2010, South Korea.
C126. Self-consistent Parametrized Physical MTJ Compact Model for STT-RAM”, A. Nigam, K. Munira, A. Ghosh, S. Wolf, E. Chen and M. R. Stan, CAS 2010.
C127. “Model based study on performance and energy optimization for STT-RAM”, A. Nigam, K. Munira, A. W. Ghosh, S. Wolf and M. R. Stan, Non Volatile Memory Workshop 2010.
C128. “Graphene Devices, Interconnect and Circuits -- Challenges and Opportunities”, Mircea R. Stan, Dincer Unluer, Avik Ghosh and Frank Tseng, ISCAS 2009.
C129. “Assumptions of local equilibrium in thermal boundary conductance calculations”, P. E. Hopkins, M. S. Tsegaye, P. M. Norris and A. Ghosh, Proceedings of MNHT2008: 2008 ASME Micro/Nanoscale Heat Transfer International Conference, Tainan, Taiwan.
C130. “Are short molecules quantum dot arrays” – B. Muralidharan, A. W. Ghosh, S. K. Pati, S. Datta, 6th IEEE Conference on Nanotechnology, 2006, pages 419-421.
C131. “Using trap-assisted tunneling for molecular sensing?”, A. W. Ghosh, Best Paper Award at ISSSR 2006 for Frontier Sensing and Monitoring.
C132. “Molecular elements on silicon substrates: modeling issues and device prospects”
A. W. Ghosh, G. C. Liang, T. Rakshit, D. Kienle and S. Datta, 4th IEEE Conference on Nanotechnology, 2004, pages 276.
C133. “Effective Mass Approach for n-MOSFETs on arbitrarily oriented wafers”, A. Rahman, M. Lundstrom and A. W. Ghosh, 10th International Workshop on Computational Electronics, IWCE-10, 2004, pages 177-178.
C134. “Huckel I-V 3.0: a self-consistent model for molecular transport and its applications”, F. Zahid, M. Paulsson, E. Polizzi, A. W. Ghosh, L. Siddiqui and S. Datta, 10th International Workshop on Computational Electronics, IWCE-10, 2004, pages 102
C135. “Assessment of Ge n-MOSFETs by quantum simulation”, A. Rahman, A. Ghosh and M. Lundstrom, IEDM Tech. Dig. p. 19.4, 4pps (2003).
C136. “Coupled Bloch-phonon modes in superlattices”, A. W. Ghosh, L. Jonsson, J. W. Wilkins, T. Dekorsy, A. Bartels, H. Kurz, K. Kohler, R. Hey and K. Ploog, 2001 Quantum Electronics and Laser Science Conference (QELS ’01), pages 150-151.
C137. “A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt Photodetectors”, Samiran Ganguly, Moonhyung Jang, Yaohua Tan, Sung-Shik Yoo, Mool C. Gupta, Avik W. Ghosh, arXiv:1806.02933