​B. S. Physics, University of Texas, 1969​M.S. Physics, University of Illinois, 1971Ph.D. ​University of Illinois, 1973Post-Doc ​University of Illinois, 1973 - 1974

"My research has focused on optoelectronic devices, the most important of which has been high performance photodiodes for fiber optics communications."

Joe Charles Campbell Lucien Carr III, Professor

Joe C. Campbell received the B.S. Degree in Physics for the University of Texas at Austin in 1969, and the M.S. and Ph.D. degrees in Physics from the University of Illinois at Urbana-Champaign in 1971 and 1973, respectively. From 1974 to 1976 he was employed by Texas Instruments where he worked on integrated optics. In 1976 he joined the staff of AT&T Bell Laboratories in Holmdel, New Jersey. In the Crawford Hill Laboratory he worked on a variety of optoelectronic devices including semiconductor lasers, optical modulators, waveguide switches, photonic integrated circuits, and photodetectors with emphasis on high-speed avalanche photodiodes for high-bit-rate lightwave systems. In January of 1989 he joined the faculty of the University of Texas at Austin as Professor of Electrical and Computer Engineering and Cockrell Family Regents Chair in Engineering. In January of 2006, Professor Campbell moved to the University of Virginia in Charlottesville as the Lucian Carr Professor of Electrical and Computer Engineering.

Professor Campbell’s technical area is photodetectors. At present he is actively involved in single-photon-counting APDs, Si-based optoelectronics, high-speed low-noise avalanche photodiodes, high-power high-linearity photodiodes, ultraviolet analanche photodiodes, and solar cells. He has coauthored ten book chapters, 400 articles for refereed technical journals, and more than 400 conference presentations. Professor Campbell teaches graduate and undergraduate courses on lasers and optoelectronic components. In 2002 Professor was inducted into the National Academy of Engineering.


  • National Academy of Engineering 2002
  • IEEE Photonics Award 2008
  • OSA/IEEE LEOS John Tyndall Award 2009
  • Heinrich Welker Medal 2015
  • International Symposium on Compound Semiconductors Quantum Device Award 2009
  • OSA Nicholas Holonyak Award 2003
  • IEEE/LEOS William Streifer Scientific Achievement Award 2001
  • IEEE Millennium Medal 2000
  • Fellow of Optical Society of America 1998
  • Fellow Member of IEEE 1990
  • Fellow of American Physical Society 2003
  • Fellow International Engineering Consortium 2008
  • AT&T Bell Laboratories Distinguished Member of Technical Staff 1985
  • Honorary Professor Beijing University of Posts and Telecommunications 2002

Research Interests

  • Optoelectronic Devices

Selected Publications

  • “High-power, high-linearity photodiodes,” Optica, vol. 3(3), pp. 328-338, 2016. Andreas Beling, Xiaojun Xie, and Joe C. Campbell
  • “AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes,” Appl. Phys. Lett., vol. 108, no. 19, 191108, May 9, 2016. Min Ren, S. J. Maddox, Yaojia Chen, S. R. Bank, and J. C. Campbell
  • “Low-Noise AlInAsSb Avalanche Photodiode,” Appl. Phys. Lett., vol. 108, no. 8, p 081102 (4 pp.), 22 Feb. 2016. M. E. Woodson, M. Ren, S. J. Maddox, Yaojia Chen, S. R. Bank, and J. C. Campbell
  • “AlInAsSb/GaSb Staircase Avalanche Photodiode,” Appl. Phys. Lett., vol. 108, no. 8, p 081101 (4 pp.), 22 Feb. 2016. Min Ren, Scott Maddox, Yaojia Chen, Madison Woodson, Seth Bank, and Joe C. Campbell
  • ”High-Power Flip-Chip Bonded Photodiode with 110 GHz Bandwidth,” J. Lightwave Tech. vol. 34, no. 9, pp. 2139-2144, 1 May 2016. Qinglong Li, Kejia Li, Yang Fu, Xiaojun Xie, Zhanyu Yang, Andreas Beling and Joe C. Campbell
  • “Recent advances in avalanche photodiodes,” J. Lightwave Tech.,. vol. 34, no. 2, p p. 278-285, 15 Jan. 2016. J. C. Campbell
  • “High-power and high-speed heterogeneously integrated waveguide-coupled photodiodes on silicon-on-insulator,” J. Lightwave Tech., vol. 34, no. 1, pp. 73-78, 1 Jan. 2016. Xiaojun Xie, Qiugui Zhou, E. Norberg, N. Jacob-Mitos, Zhanyu Yang, Yaojia Chen, A. Ramaswamy, G. Fish, J. C. Campbell, and A. Beling
  • “Heterogeneously integrated photodiodes on silicon,” IEEE Journal of Quantum Electronics, vol. 51, no. 11, p. 0600506 (6 pp.), Nov. 2015. A. Beling and J. C. Campbell
  • “High-power photodiode integrated with coplanar patch antenna for 60 GHz applications,” IEEE Photon. Tech. Lett., 2015. Kejia Li, Xiaojun Xie, Qinglong Li, Yang Shen, Madison E., Zhanyu Yang, Andreas Beling, and Joe C. Campbell
  • “High-speed photodiodes,” IEEE J. Sel. Topics Quantum Elect., Vol. 20, no. 6, p. 3804507 (7pp.), Nov. – Dec. 2014. Andreas Beling and J. C. Campbell
  • “Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond, Optica, vol. 1, no. 6, pp. 429 – 436, 2014. Xiaojun Xie, Qiugui Zhou, Kejia Li, Yang Shen, Qinglong Li, Zhanyu Yang, Andreas Beling, and Joe C. Campbell
  • “Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes,” Optics Express, vol. 21, no. 14, pp. 16716-16721, July 15, 2013. Zhiwen Lu, Wenlu Sun, Qiugui Zhou, Joe C. Campbell, Xudong Jiang, and Mark A. Itzler
  • “Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping,” Appl. Phys. Lett., vol. 101, no. 15, pp. 151124 (3pp.), Oct. 2012. S. J. Maddox, Wenlu Sun, Zhiwen Lu, Hari P. Nair, J. C. Campbell, and S. R. Bank
  • “Ge/Si waveguide avalanche photodiodes on SOI substrates for high speed communication,” ECS Transactions, vol. 33, no. 6, pp. 757-764, 2010. Yimin Kang, Yuval Saado, Mike Morse, Mario J. Paniccia, Joe C. Campbell, John E. Bowers, and Alexandre Pauchard
  • “Characterization of an InGaAs/InP-based single-photon avalanche diode with gated-passive quenching with active reset circuit,” J. Modern Optics, vol. 58, Nos. 3-4, pp. 201-209, February 2011. Chong Hu, Xiaoguang Zheng, Joe C. Campbell, Bora M. Onat, Xudong Jiang, and Mark A. Itzler
  • High-detectivity and high-single-photon-detection-efficiency 4H-SiC avalanche photodiodes,” IEEE J. Quantum Electron, vol. 45, no. 3, pp. 300-3003, March 2009. Xiaogang Bai, Han-Din Liu, Dion C. McIntosh, and Joe C. Campbell
  • “The HgCdTe electron avalanche photodiode,” J. Electron. Mat., vol. 35, no. 6, pp. 1166-1173, June 2006. J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, and J. Campbell
  • “High-speed and low-noise SACM avalanche photodiodes with an impact-ionization engineered multiplication region,” IEEE Photonics Technology Letters, vol. 17, no.8, pp. 1719-1721 (2005). Ning Duan, Shuling Wang, Feng Ma, Ning Li, J. C. Campbell, Chad Wang, and L. A. Coldren
  • “Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates,” IEEE Photon. Tech. Lett., vol. 14, pp. 1722-1724 (2002). S. Wang, J. B. Hurst, F. Ma, R. Sidhu, X. Sun, X. G. Zheng, A. L. Holmes, Jr., J. C. Campbell, A. Huntington, and L. A. Coldren
  • “CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates”, IEEE J. Quantum Electron., vol. 38, pp.193-196 (2002). S. M. Csutak, W. E. Wu, J. D. Schaub, R. Shimer, and J. C. Campbell
  • “Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode,” IEEE Photonics Tech. Lett., vol. 12, pp.416-418, (2000). G. S. Kinsey, C. C. Hansing, A. L. Holmes, Jr., B. G. Streetman, J. C. Campbell, and A. G. Dentai
  • “Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high speed and high gain-bandwidth product,” IEEE Photon. Tech. Lett., vol. 10, pp. 409-411 (1998). H. Nie, K.A. Anselm, C. Lenox, P. Yuan, C. Hu, G. Kinsey, B.G. Streetman, and J.C. Campbell
  • "Multigigabit-per-Second Avalanche Photodiode Lightwave Receivers," J. Lightwave Tech., LT-5, 1351 (1987). B.L. Kasper and J.C. Campbell
  • "High-Performance Avalanche Photodiode with Separate Absorption, "Grading", and Multiplication Regions," Electron. Lett., 19, 818 (1983). J.C. Campbell, A.G. Dentai, W.S. Holden and B.L. Kasper
  • "Heterojunction Phototransistors for Long-Wavelength Optical Receivers," J. Appl. Phys., 53, 1203 (1982). J.C. Campbell and K. Ogawa

Courses Taught

  • ECE 5241 Lasers and Optics Engineering
  • ECE 6642 Optoelectronic Devices