B.S., Materials Engineering, Iowa State University, 2002M.M.S.E., North Carolina State University, 2005Ph.D., Materials Science and Engineering, North Carolina State University, 2006Post-Doc at The Pennsylvania State University, 2006-2008
Our group studies the process-structure-property relations in ferroelectric, dielectric, and ion-conducting oxides. The group primarily focuses on thin films prepared by a wide range of methods, including: pulsed laser ablation, sputtering, atomic layer deposition, and chemical solution deposition. We use the linakges between process, structure, and properties to enable materials integration resulting in novel electronic, thermal, or optical functionality and devices. This includes demonstration of active phonon transport regulation using ferroelectrics, methods to interrogate nanoscale ferroelectric domain structure in active devices, property enhancement via improved material integration, and fast ion conducting thin films for energy storage, among others.
Bio: Jon Ihlefeld is an Associate Professor in the Materials Science and Engineering and Electrical and Computer Engineering Departments at the University of Virginia. He joined UVA in 2017 following a career at Sandia National Laboratories in Albuquerque, NM where he held positions of Senior, Principal, and Distinguished Member of the Technical Staff in the Materials Science and Engineering Center. He is the Deputy Vice-President for Ferroelectrics for the IEEE, a past Chair of the Electronics Division of The American Ceramic Society, an Associate Editor of the Journal of The American Ceramic Society, a Principal Editor of the Journal of Materials Research, and serves on the Editorial Advisory Board for Applied Physics Letters.
Defense Advanced Research Projects Agency, Young Faculty Award2020
Richard M. Fulrath Award of The American Ceramic Society2017
Sandia National Laboratories Special Appointment to Distinguished Staff Member2017
R&D 100 Award, Ultra-Wide-Bandgap Power Electronics2017
IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society Ferroelectrics Young Investigator Award2016
IEEE Senior Member Elevation2016
Sandia National Laboratories Postdoctoral Professional Development Program Distinguished Mentorship Award2015
Sandia National Laboratories Up & Coming Innovator2015
Sandia National Laboratories Mission Innovator2015
Impact of Oxygen Content on Phase Constitution and Ferroelectric Behavior of Hafnium Oxide Thin Films Deposited by Reactive High-Power Impulse Magnetron Sputtering, Acta Materialia (2022). ABSSamantha T. Jaszewski, Eric R. Hoglund, Anna Costine, Marc H. Weber, Shelby S. Fields, Maria Gabriela Sales, Alejandro Salanova, Jacob L. Jones, Nikhil Shukla, Stephen J. McDonnell, Petra Reinke, James M. Howe, and Jon F. Ihlefeld, et al.
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films, Advanced Electronic Materials, 2200601 (2022) ABSShelby S. Fields, Truong Cai, Samantha T. Jaszewski, Alejandro Salanova, Takanori Mimura, Helge H. Heinrich, M. David Henry, Kyle P. Kelley, Brian W. Sheldon, and Jon F. Ihlefeld
Compositional and Phase Dependence of Elastic Modulus of Crystalline and Amorphous Hf1-xZrxO2 Thin Films, Applied Physics Letters, 118, 012903 (2021) ABSShelby S. Fields, David H. Olson, Samantha T. Jaszewski, Chris M. Fancher, Sean W. Smith, Diane A. Dickie, Giovanni Esteves, M. David Henry, Paul S. Davids, Patrick E. Hopkins, and Jon F. Ihlefeld
Phase Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films, ACS Applied Materials and Interfaces, 12(23), 26577-26585 (2020). ABSShelby S. Fields, Sean W. Smith, Philip J. Ryan, Samantha T. Jaszewski, Ian A. Brummel, Alejandro Salanova, Giovanni Esteves, Steve L. Wolfley, Michael D. Henry, Paul S. Davids, and Jon F. Ihlefeld
Voltage Controlled Bistable Thermal Conductivity in Suspended Ferroelectric Thin Film Membranes, ACS Applied Materials and Interfaces, 10(30) 25493–25501 (2018) ABSBrian M. Foley, Margeaux Wallace, John T. Gaskins, Elizabeth A. Paisley, Raegan L. Johnson-Wilke, Jong-Woo Kim, Philip J. Ryan, Susan Trolier-McKinstry, Patrick E. Hopkins, and Jon F. Ihlefeld
Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films, Applied Physics Letters, 110, 072901 (2017) ABSS. W. Smith, A. R. Kitahara, M. A. Rodriguez, M. D. Henry, M. T. Brumbach, and J. F. Ihlefeld
Oxygen partial pressure dependence of thermoelectric power factor in polycrystalline n-type SrTiO3: Consequences for long term stability in thermoelectric oxides, Applied Physics Letters, 110, 173901 (2017) ABSPeter A. Sharma, Harlan J. Brown-Shaklee, and Jon F. Ihlefeld
Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations, Journal of the American Ceramic Society, 99(8), 2537-2557 (2016) ABSJon F. Ihlefeld, David T. Harris, Ryan Keech, Jacob L. Jones, Jon-Paul Maria, and Susan Trolier-McKinstry
Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films, Nano Letters, 15(3), 1791-1795 (2015) ABSJon F. Ihlefeld, Brian M. Foley, David A. Scrymgeour, Joseph R. Michael, Bonnie B. McKenzie, Douglas L. Medlin, Margeaux Wallace, Susan Trolier-McKinstry, and Patrick E. Hopkins
Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content, Applied Physics Letters, 107, 102101 (2015) ABSElizabeth A. Paisley, Michael Brumbach, Andrew A. Allerman, Stanley Atcitty, Albert G. Baca, Andrew M. Armstrong, Robert J. Kaplar, and Jon F. Ihlefeld
Chemically Homogeneous Complex Oxide Thin Films Via Improved Substrate Metallization, Advanced Functional Materials, 22(11) 2295-2302 (2012) ABSChristopher T. Shelton, Paul G. Kotula, Geoff L. Brennecka, Peter G. Lam, Kelsey E. Meyer, Jon-Paul Maria, Brady J. Gibbons, and Jon F. Ihlefeld
Fast Lithium‐Ion Conducting Thin‐Film Electrolytes Integrated Directly on Flexible Substrates for High‐Power Solid‐State Batteries, Advanced Materials, 23(47) 5663-5667 (2011) ABSJon F. Ihlefeld, Paul G. Clem, Barney L. Doyle, Paul G. Kotula, Kyle R. Fenton, and Christopher A. Apblett