Hamed's paper entitled "Low Power In-Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures (link)" published in ACS Nano. In this paper, H. Vakili et al. show the use of two ferromagnet (FM)/topological insulation (TI) heterostructures to design an integrated 1-transistor 1-magnetic tunnel junction magnetic (1T-1MTJ) random access memory unit (MRAM) for an ultra-low power Processing-in-Memory (PiM) architecture.